Low-resistance Ti/Al ohmic contact on undoped ZnO
نویسندگان
چکیده
منابع مشابه
Investigation of post-annealing effect on efficient ohmic contact to ZnO thin film using Ti/Al metallization strategy
Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...
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ژورنال
عنوان ژورنال: Journal of Electronic Materials
سال: 2002
ISSN: 0361-5235,1543-186X
DOI: 10.1007/s11664-002-0197-1